vp2020l, bss92 vishay siliconix document number: 70210 s-04279?rev. e, 16-jun-01 www.vishay.com 11-1 p-channel 200-v (d-s) mosfets
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) vp2020l ?200 20 @ v gs = ?4.5 v ?0.8 to ?2.5 ?0.12 bss92 ?200 20 @ v gs = ?10 v ?0.8 to ?2.8 ?0.15
high-side switching secondary breakdown free: ?220 v low on-resistance: 11.5 low-power/voltage driven excellent thermal stability ease in driving switches full-voltage operation low offset voltage easily driven without buffer no high-temperature ?run-away? drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. power supply, converters motor control switches ?s? vp 2020l xxyy to-92-18cd (to-18 lead form) top view s g d 1 2 3 1 to-226aa (to-92) top view s d g 2 3 bss92 vp2020l device marking front view ?s? = siliconix logo xxyy = date code ?s? = siliconix logo xxyy = date code device marking front view ?s? bs s92 xxyy ?s? = siliconix logo xxyy = date code device marking front view
parameter symbol vp2020l bss92 unit drain-source voltage v ds ?200 ?200 gate-source voltage v gs 20 20 v t a = 25 c ?0.12 ?0.15 continuous drain current (t j = 150 c) t a = 100 c i d ?0.08 ?0.09 a pulsed drain current a i dm ?0.48 ?0.6 t a = 25 c 0.8 1.0 power dissipation t a = 100 c p d 0.32 0.4 w thermal resistance, junction-to-ambient r thja 156 125 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature.
vp2020l, bss92 vishay siliconix www.vishay.com 11-2 document number: 70210 s-04279 ? rev. e, 16-jun-01
limits vp2020l bss92 parameter symbol test conditions typ a min max min max unit static drain-source v gs = 0 v, i d = ? 10 a ? 220 drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 220 ? 200 v gate-threshold voltage v gs(th) v ds = v gs , i d = ? 1 ma ? 1.9 ? 0.8 ? 2.5 ? 0.8 ? 2.8 v ds = 0 v, v gs = 20 v 10 100 gate-body leakage i gss t j = 125 c 50 na v ds = 0.8 x v (br)dss , v gs = 0 v ? 1 t j = 125 c ? 100 zero gate voltage drain current i dss v ds = ? 200 v, v gs = 0 v ? 60 a drain current dss t j = 125 c ? 200 v ds = ? 60 v, v gs = 0 v ? 0.2 on-state drain current b i d(on) v ds = ? 10 v, v gs = ? 4.5 v ? 250 ? 100 ma v gs = ? 10 v, i d = ? 0.1 a 11.5 20 v gs = ? 4.5 v, i d = ? 0.1 a 15 20 drain-source on-resistance b r ds(on) t j = 125 c 28 40 on-resistance b ds(on) v gs = ? 4.5 v, i d = ? 0.05 a 15 t j = 125 c 28 forward v ds = ? 10 v, i d = ? 0.1 a 170 100 forward transconductance b g fs v ds = ? 25 v, i d = ? 0.1 a 170 60 ms diode forward voltage v sd i s = ? 0.3 a, v gs = 0 v ? 0.9 ? 1.2 v dynamic input capacitance c iss 30 70 130 output capacitance c oss v ds = ? 25 v, v gs = 0 v f = 1 mhz 10 20 30 pf reverse transfer capacitance c rss f = 1 mhz 3 10 15 switching c t d(on) 6 10 turn-on time t r v dd = ? 25 v, r l = 250 8 15 i d ? 0.1 a, v gen = ? 10 v ns t d(off) d gen r g = 25 18 30 turn-off time t f r g = 25 17 25 notes a. for design aid only, not subject to production testing. vpdq20 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
vp2020l, bss92 vishay siliconix document number: 70210 s-04279 ? rev. e, 16-jun-01 www.vishay.com 11-3 20 0 ? 4 ? 8 ? 12 ? 16 ? 20 18 16 14 12 10 8 ? 100 ? 80 ? 60 0 0 ? 1 ? 5 ? 40 ? 20 ? 2 ? 3 ? 4 ? 500 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 400 ? 300 ? 200 ? 100 0 ohmic region characteristics output characteristics for low gate drive on-resistance normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v ds ? drain-to-source voltage (v) v ds ? drain-to-source voltage (v) v gs = ? 10 v ? 5 v ? 6 v ? 55 c t j = 125 c v ds = ? 15 v ? 0.02 a i d = ? 0.1 a t j ? junction temperature ( c) ? 4.5 v ? 4 v ? 3 v ? 100 0 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 ? 80 ? 60 ? 40 ? 20 0 v gs = ? 4 v ? 3.6 v ? 3 v ? 2 v v gs ? gate-source voltage (v) ? 0.05 a 25 20 15 0 0 ? 50 ? 250 10 5 ? 100 ? 150 ? 200 v gs = ? 4.5 v ? 10 v 2.25 2.00 1.75 0.50 ? 50 ? 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = ? 4.5 v i d = ? 0.1 a 25 c i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) r ds(on) ? on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) ( normalized)
vp2020l, bss92 vishay siliconix www.vishay.com 11-4 document number: 70210 s-04279 ? rev. e, 16-jun-01 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1.0 100 10 1 k ? 10 ? 100 ? 1000 100 10 1 120 100 80 0 0 ? 10 ? 50 60 40 ? 20 ? 30 ? 40 20 threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge load condition effects on switching normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) i d ? drain current (a) v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? 55 c q g ? total gate charge (nc) c rss c oss c iss v dd = ? 25 v r g = 25 v gs = 0 to ? 10 v t d(on) t d(off) t r t f t j = 150 c 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 ? 12 ? 10 ? 8 0 0 0.5 2.5 ? 6 ? 4 1.0 1.5 2.0 ? 2 i d = ? 0.1 a v ds = ? 100 v ? 160 v ? 10.0 ? 1.0 ? 0.01 0 ? 3.5 ? 0.1 ? 1.0 ? 2.0 ? 3.0 v ds = ? 5 v 125 c 25 c v gs = 0 v f = 1 mhz i d ? drain current (ma) c ? capacitance (pf) v gs ? gate-to-source voltage (v) t ? switching time (ns)
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